dc.contributor.authorWong, Lydia Helenaen_US
dc.date.accessioned2010-04-23T02:14:38Z
dc.date.accessioned2017-07-23T08:37:05Z
dc.date.available2010-04-23T02:14:38Z
dc.date.available2017-07-23T08:37:05Z
dc.date.copyright2007en_US
dc.date.issued2007
dc.identifier.citationWong, L. H. (2007). Strain relaxation in SiGe/Si heteroepitaxy. Doctoral thesis, Nanyang Technological University, Singapore.
dc.identifier.urihttp://hdl.handle.net/10356/35953
dc.description163 p.en_US
dc.description.abstractHeteroepitaxy of lattice-mismatched materials are important for both optoelectronic and microelectronic applications. Within the community of research in heteroepitaxy, the long-standing goal is to obtain strain relaxation while minimizing the generation of defects which often leads to device degradation.en_US
dc.subjectDRNTU::Engineering::Materials::Photonics and optoelectronics materials
dc.titleStrain relaxation in SiGe/Si heteroepitaxyen_US
dc.typeThesisen_US
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.contributor.supervisorWong Chee Cheongen_US
dc.description.degreeDOCTOR OF PHILOSOPHY (MSE)en_US


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