Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/35955
Title: Investigating the electromigration reliability of copper interconnects
Authors: Shao, Wei.
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Issue Date: 2007
Source: Shao, W. (2007). Investigating the electromigration reliability of copper interconnects. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: With changing materials systems and interconnect architectures from Al based metallization to Cu dual damascene based metallization, electromigration (EM) continues to be a major reliability concern. The objectives of this research are to investigate EM behavior of Cu interconnects, develop an in-depth understanding of the EM-induced voiding mechanisms, and lastly to suggest methodologies to improve the reliability of dual damascene Cu interconnects.
Description: 170 p.
URI: http://hdl.handle.net/10356/35955
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Theses

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