Investigating the electromigration reliability of copper interconnects
Date of Issue2007
School of Materials Science and Engineering
With changing materials systems and interconnect architectures from Al based metallization to Cu dual damascene based metallization, electromigration (EM) continues to be a major reliability concern. The objectives of this research are to investigate EM behavior of Cu interconnects, develop an in-depth understanding of the EM-induced voiding mechanisms, and lastly to suggest methodologies to improve the reliability of dual damascene Cu interconnects.
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects