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|Title:||Investigating the electromigration reliability of copper interconnects||Authors:||Shao, Wei.||Keywords:||DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects||Issue Date:||2007||Source:||Shao, W. (2007). Investigating the electromigration reliability of copper interconnects. Doctoral thesis, Nanyang Technological University, Singapore.||Abstract:||With changing materials systems and interconnect architectures from Al based metallization to Cu dual damascene based metallization, electromigration (EM) continues to be a major reliability concern. The objectives of this research are to investigate EM behavior of Cu interconnects, develop an in-depth understanding of the EM-induced voiding mechanisms, and lastly to suggest methodologies to improve the reliability of dual damascene Cu interconnects.||Description:||170 p.||URI:||http://hdl.handle.net/10356/35955||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||MSE Theses|
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