Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/35955
Title: | Investigating the electromigration reliability of copper interconnects | Authors: | Shao, Wei | Keywords: | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects | Issue Date: | 2007 | Source: | Shao, W. (2007). Investigating the electromigration reliability of copper interconnects. Doctoral thesis, Nanyang Technological University, Singapore. | Abstract: | With changing materials systems and interconnect architectures from Al based metallization to Cu dual damascene based metallization, electromigration (EM) continues to be a major reliability concern. The objectives of this research are to investigate EM behavior of Cu interconnects, develop an in-depth understanding of the EM-induced voiding mechanisms, and lastly to suggest methodologies to improve the reliability of dual damascene Cu interconnects. | Description: | 170 p. | URI: | https://hdl.handle.net/10356/35955 | DOI: | 10.32657/10356/35955 | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
Appears in Collections: | MSE Theses |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
MSE_THESES_12.pdf | 20.4 MB | Adobe PDF | ![]() View/Open |
Page view(s) 5
327
Updated on Feb 27, 2021
Download(s) 20
222
Updated on Feb 27, 2021
Google ScholarTM
Check
Altmetric
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.