Effect of dielectrics and work function engineering on the performance of N-type organic thin film transistors (otfts)

Abstract

In recent years, significant interest has recently been focused onto organic thin-film transistors (OTFTs) due to their potential applications in low-cost, large area, and flexible electronic devices. P-type field effect transistors (OFETs) have earlier been in the research focus and its performance has been known to have exceeded 1 cm2/Vs. Now, new interest is being directed into understanding n-type semiconductor and its processes for the possible use in complementary metal oxide semiconductor (CMOS)-type circuits and light-emitting FETs.