Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/35963
Title: Plasma assisted deposition of Ti-Si-N and Ti-Si-N-O diffusion barrier films
Authors: Ee, Elden Yong Chiang
Keywords: DRNTU::Engineering::Materials::Plasma treatment
Issue Date: 2006
Source: Ee, E. Y. C. (2006). Plasma assisted deposition of Ti-Si-N and Ti-Si-N-O diffusion barrier films. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: In the sub-quarter-micron generation integrated circuits (ICs), Cu has completely replaced aluminum as the interconnect material due to its favorable electrical conductivity (1.67 uQ»cm) and resistance to electromigration. In order to prevent Cu contamination in the silicon device layer, diffusion barriers such as tantalum (Ta) and tantalum nitride (TaN) have to be used to fully contain the Cu interconnects. It is a challenging issue to develop a new generation of more effective diffusion barriers with further down-scaling of transistor dimensions.
Description: 216 p.
URI: https://hdl.handle.net/10356/35963
DOI: 10.32657/10356/35963
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Theses

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