Plasma assisted deposition of Ti-Si-N and Ti-Si-N-O diffusion barrier films
Ee, Elden Yong Chiang
Date of Issue2006
School of Materials Science and Engineering
In the sub-quarter-micron generation integrated circuits (ICs), Cu has completely replaced aluminum as the interconnect material due to its favorable electrical conductivity (1.67 uQ»cm) and resistance to electromigration. In order to prevent Cu contamination in the silicon device layer, diffusion barriers such as tantalum (Ta) and tantalum nitride (TaN) have to be used to fully contain the Cu interconnects. It is a challenging issue to develop a new generation of more effective diffusion barriers with further down-scaling of transistor dimensions.