Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/35966
Title: Study of roughness evolution during reactive ion etching
Authors: Santosh Kumar Pani
Keywords: DRNTU::Engineering::Materials::Plasma treatment
Issue Date: 2006
Source: Santosh Kumar Pani. (2006). Study of roughness evolution during reactive ion etching. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: Polymers are promising candidates for cost-sensitive integrated optical components such as waveguides and waveguide based devices for communication applications and optical interconnects for chip to chip, board to board and back plane applications because of their versatility. Reactive ion etching (RIE) is a commonly used patterning technique for the fabrication of polymeric waveguides and waveguide based devices. One important consequence of RIE in the fabrication process is the evolution of roughness at different interfaces. Current research focuses the fabrication of polymeric optical waveguides by photolithography and RIE with the emphasis on issues which are bottlenecks for the waveguiding/interconnects technologies. In particular, this research work concentrates on studies of various types of roughness evolved during RIE of polymeric waveguides. Important contributions to the field of waveguiding/interconnect technologies include measurement of various types of roughness evolved during RIE, new discovery of etch depth dependences and the explanation of this phenomenon based on Monte Carlo simulation of etch-ion dynamics, formulation of the hypotheses and the etching mechanism, and controlling these roughnesses by developing novel recipes.
Description: 189 p.
URI: https://hdl.handle.net/10356/35966
DOI: 10.32657/10356/35966
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Theses

Files in This Item:
File Description SizeFormat 
MSE_THESES_3.pdf17.26 MBAdobe PDFThumbnail
View/Open

Page view(s) 20

440
Updated on May 10, 2021

Download(s) 20

144
Updated on May 10, 2021

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.