Laser processing of Ga2O3 micro and nanostructures

Abstract

A novel synthesis route has been developed for the growth of monoclinic Ga2C>3 nanoparticles, nanoclusters and nanowires by pulsed laser ablation of GaN (99.99 percent purity), using pulsed KrF excimer laser (k = 248 nm). Room-temperature synthesis of Ga2C>3 nanoparticles and nanoclusters was carried out in N2 or O2 gas ambient. The effects of laser fluence, deposition pressure, deposition ambient on the size, shape, degree of aggregation and crystallinity of the as-deposited products were studied accordingly. Transmission electron microscopy (TEM) results revealed an aggregation of Ga2C>3 nanoparticles that proceeds one-dimensionally to form chainlike nanostructures.