dc.contributor.authorLam, Jenny Hwee Mingen_US
dc.date.accessioned2010-04-23T02:15:48Z
dc.date.accessioned2017-07-23T08:37:08Z
dc.date.available2010-04-23T02:15:48Z
dc.date.available2017-07-23T08:37:08Z
dc.date.copyright2007en_US
dc.date.issued2007
dc.identifier.citationLam, J. H. M. (2007). Laser processing of Ga2O3 micro and nanostructures. Doctoral thesis, Nanyang Technological University, Singapore.
dc.identifier.urihttp://hdl.handle.net/10356/35972
dc.description203 p.en_US
dc.description.abstractA novel synthesis route has been developed for the growth of monoclinic Ga2C>3 nanoparticles, nanoclusters and nanowires by pulsed laser ablation of GaN (99.99 percent purity), using pulsed KrF excimer laser (k = 248 nm). Room-temperature synthesis of Ga2C>3 nanoparticles and nanoclusters was carried out in N2 or O2 gas ambient. The effects of laser fluence, deposition pressure, deposition ambient on the size, shape, degree of aggregation and crystallinity of the as-deposited products were studied accordingly. Transmission electron microscopy (TEM) results revealed an aggregation of Ga2C>3 nanoparticles that proceeds one-dimensionally to form chainlike nanostructures.en_US
dc.subjectDRNTU::Engineering::Materials::Nanostructured materials
dc.titleLaser processing of Ga2O3 micro and nanostructuresen_US
dc.typeThesisen_US
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.contributor.supervisorOng Teng Sanen_US
dc.contributor.supervisorGan Chee Lip
dc.description.degreeDOCTOR OF PHILOSOPHY (MSE)en_US
dc.identifier.doihttps://doi.org/10.32657/10356/35972


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