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|Title:||Etching characteristics of InxGa1-xAs and InP by inductively coupled plasma etching (ICP) technique||Authors:||Vicknesh Sahmuganathan||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials||Issue Date:||2005||Abstract:||This thesis presents the Inductively Coupled Plasma (ICP) Etching Characteristics of InxGal-,As and InP grown by metal organic-chemical vapor deposition (MOCVD). The ICP source produces high-density plasma with ion energy and ion flux operated separately for better uniform etching on large diameter substrates. The studies focused on ICP etching characteristics of InxGa1-xAs and InP materials with variety of process parameters, e.g. different etch gases, gas flows, ICP power, and RIE power, etc. Effect of specific gas chemistry on the ICP etching on InxGal-xAs samples with different indium compositions 'x' and InP material has been||URI:||http://hdl.handle.net/10356/3631||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
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