Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3631
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dc.contributor.authorVicknesh Sahmuganathanen_US
dc.date.accessioned2008-09-17T09:34:04Z
dc.date.available2008-09-17T09:34:04Z
dc.date.copyright2005en_US
dc.date.issued2005
dc.identifier.urihttp://hdl.handle.net/10356/3631
dc.description.abstractThis thesis presents the Inductively Coupled Plasma (ICP) Etching Characteristics of InxGal-,As and InP grown by metal organic-chemical vapor deposition (MOCVD). The ICP source produces high-density plasma with ion energy and ion flux operated separately for better uniform etching on large diameter substrates. The studies focused on ICP etching characteristics of InxGa1-xAs and InP materials with variety of process parameters, e.g. different etch gases, gas flows, ICP power, and RIE power, etc. Effect of specific gas chemistry on the ICP etching on InxGal-xAs samples with different indium compositions 'x' and InP material has beenen_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
dc.titleEtching characteristics of InxGa1-xAs and InP by inductively coupled plasma etching (ICP) techniqueen_US
dc.typeThesisen_US
dc.contributor.supervisorTang, Xiaohongen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeMaster of Scienceen_US
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