Please use this identifier to cite or link to this item:
|Title:||Optimization of via patterns for 0.13 micrometer copper dual damascene technology using phase shift mask||Authors:||Chen, Hao.||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Microelectronics||Issue Date:||2003||Abstract:||The attenuated phase shifting mask has become very popular for printing via patterns in today’s semiconductor manufacturing industry. This is because this is suitable for patterns with any shapes. Also, it has an easier manufacturing technology. Its major disadvantage is the printability of side lobes due to the light that is transmitted through the dark areas.||URI:||http://hdl.handle.net/10356/3648||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.