Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3674
Title: Growth and characterization of low-k dielectrics for multilevel interconnect applications
Authors: Wang, Minrui
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic packaging
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Issue Date: 2005
Source: Wang, M. (2005). Growth and characterization of low-k dielectrics for multilevel interconnect applications. Master’s thesis, Nanyang Technological University, Singapore.
Abstract: This thesis focuses on the growth and characterization of carbon doped silicon oxide (SiO(C,H)) low k dielectrics for multilevel interconnect applications.
URI: https://hdl.handle.net/10356/3674
DOI: 10.32657/10356/3674
Rights: Nanyang Technological University
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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