Optical transition in semiconductor low dimensional structures

Abstract

InxGa1-xAs/GaAs strain material system was chosen in this dissertation to study the optical transition properties of low dimensional semiconductor as it is an important material system from both the fundamental and application point of view. Details of theoretical explanation of optical transition models for all four quantum structures were introduced in the dissertation. However, restricted by experimental conditions, only quantum well (QW) structure samples were discussed in this study.