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|Title:||Optical transition in semiconductor low dimensional structures||Authors:||Wang, Yan Jun.||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Semiconductors||Issue Date:||2000||Abstract:||InxGa1-xAs/GaAs strain material system was chosen in this dissertation to study the optical transition properties of low dimensional semiconductor as it is an important material system from both the fundamental and application point of view. Details of theoretical explanation of optical transition models for all four quantum structures were introduced in the dissertation. However, restricted by experimental conditions, only quantum well (QW) structure samples were discussed in this study.||URI:||http://hdl.handle.net/10356/3700||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
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