Please use this identifier to cite or link to this item:
Title: Optical transition in semiconductor low dimensional structures
Authors: Wang, Yan Jun.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2000
Abstract: InxGa1-xAs/GaAs strain material system was chosen in this dissertation to study the optical transition properties of low dimensional semiconductor as it is an important material system from both the fundamental and application point of view. Details of theoretical explanation of optical transition models for all four quantum structures were introduced in the dissertation. However, restricted by experimental conditions, only quantum well (QW) structure samples were discussed in this study.
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

Files in This Item:
File Description SizeFormat 
  Restricted Access
7.42 MBAdobe PDFView/Open

Google ScholarTM


Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.