Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3700
Title: Optical transition in semiconductor low dimensional structures
Authors: Wang, Yan Jun.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2000
Abstract: InxGa1-xAs/GaAs strain material system was chosen in this dissertation to study the optical transition properties of low dimensional semiconductor as it is an important material system from both the fundamental and application point of view. Details of theoretical explanation of optical transition models for all four quantum structures were introduced in the dissertation. However, restricted by experimental conditions, only quantum well (QW) structure samples were discussed in this study.
URI: http://hdl.handle.net/10356/3700
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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