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https://hdl.handle.net/10356/3700Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Wang, Yan Jun. | en_US |
| dc.date.accessioned | 2008-09-17T09:35:32Z | - |
| dc.date.available | 2008-09-17T09:35:32Z | - |
| dc.date.copyright | 2000 | en_US |
| dc.date.issued | 2000 | - |
| dc.identifier.uri | http://hdl.handle.net/10356/3700 | - |
| dc.description.abstract | InxGa1-xAs/GaAs strain material system was chosen in this dissertation to study the optical transition properties of low dimensional semiconductor as it is an important material system from both the fundamental and application point of view. Details of theoretical explanation of optical transition models for all four quantum structures were introduced in the dissertation. However, restricted by experimental conditions, only quantum well (QW) structure samples were discussed in this study. | en_US |
| dc.rights | Nanyang Technological University | en_US |
| dc.subject | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors | - |
| dc.title | Optical transition in semiconductor low dimensional structures | en_US |
| dc.type | Thesis | en_US |
| dc.contributor.supervisor | Tang, Xiaohong | en_US |
| dc.contributor.school | School of Electrical and Electronic Engineering | en_US |
| dc.description.degree | Master of Science (Photonics) | en_US |
| item.grantfulltext | restricted | - |
| item.fulltext | With Fulltext | - |
| Appears in Collections: | EEE Theses | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| EEE-THESES_1536.pdf Restricted Access | 7.42 MB | Adobe PDF | View/Open |
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