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https://hdl.handle.net/10356/3709| Title: | Predictive technology modeling for deep-submicron MOSFET design | Authors: | Wang, Yuwen. | Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors | Issue Date: | 2002 | Abstract: | The predictive technology modeling using numerical and compact model for deep-submicron MOSFET is explored in this thesis. The devices are designed for a broad range of nMOSFETs with different pile-up/different LDD extension under gate structures. The investigations inludes numerical modeling for threshold voltage, with different pile-up structure MOSFETs. | URI: | http://hdl.handle.net/10356/3709 | Schools: | School of Electrical and Electronic Engineering | Rights: | Nanyang Technological University | Fulltext Permission: | restricted | Fulltext Availability: | With Fulltext |
| Appears in Collections: | EEE Theses |
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| File | Description | Size | Format | |
|---|---|---|---|---|
| EEE-THESES_1544.pdf Restricted Access | 3.18 MB | Adobe PDF | View/Open |
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