Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3746
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dc.contributor.authorWong, Jen Shuang.en_US
dc.date.accessioned2008-09-17T09:36:40Z-
dc.date.available2008-09-17T09:36:40Z-
dc.date.copyright2002en_US
dc.date.issued2002-
dc.identifier.urihttp://hdl.handle.net/10356/3746-
dc.description.abstractThis thesis presents the approaches to characterize the deep submicron-meter MOSFETs operating both in DC and in high frequency region. This thesis also conducts a comprehensive study and investigation on the high-frequency behaviours of the MOSFETs.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Semiconductors-
dc.titleCharacterization and modeling of deep-submicron MOSFET's including frequency effectsen_US
dc.typeThesisen_US
dc.contributor.supervisorMa, Jian-Guoen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeMaster of Engineeringen_US
dc.contributor.supervisor2Yeo, Kiat Sengen_US
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