dc.contributor.authorChen, Junen_US
dc.date.accessioned2008-09-17T09:36:42Z
dc.date.accessioned2017-07-23T08:31:24Z
dc.date.available2008-09-17T09:36:42Z
dc.date.available2017-07-23T08:31:24Z
dc.date.copyright2006en_US
dc.date.issued2006
dc.identifier.citationChen, J. (2006). Simulation and development of triple-junction color sensors using CMOS-compatible processing. Doctoral thesis, Nanyang Technological University, Singapore.
dc.identifier.urihttp://hdl.handle.net/10356/3748
dc.description.abstractColor sensor can be used to verify position of objects, recognize color sequence. Conventional color sensors employ three identical photodiodes with red, green, and blue optical filters deposited on their surface. This approach leads to an increased occupied silicon area. The color sensor with vertically stacked triple-junction structure (investigated in this thesis) can overcome these restrictions. The operation of the color sensor relies on the wavelength dependence of light absorption in silicon. The thorough design of the color sensor included more successive steps. Initially, theoretical calculations were performed to find the depth and depletion region width of each junction required to optimize their spectral responsivity. Once these main features were established, the doping concentrations for each junction were determined and the complete fabrication process was designed. Then TSUPREM-IV was used to simulate the whole process of the device; MEDICI was used to simulate the device optical and electrical characteristics. Afterwards, the mask layout, process run sheets based on two basic models: abrupt junction model and linearly graded junction model, were designed and confirmed. The practical fabrication of the color sensors has been carried out in MFL, using the modified 2?m CMOS process. Finally, the fabricated sensors have been characterized.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
dc.titleSimulation and development of triple-junction color sensors using CMOS-compatible processingen_US
dc.typeThesisen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.supervisorRam Singh Rana
dc.contributor.supervisorPoenar Daniel Puiuen_US
dc.description.degreeDOCTOR OF PHILOSOPHY (EEE)en_US
dc.identifier.doihttps://doi.org/10.32657/10356/3748


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