Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3766
Title: Improvement on within wafer and wafer-to-wafer uniformity by chemical mechanical polishing (CMP)
Authors: Wu, Hong Ying.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2002
Abstract: CMP plays a very important role to realize multi-level metallization which is dependent on the ability to effectively planarize the dielectric layers, which insulate the multi-level interconnects. Despite this advantage, the process still suffer from large global non-uniformity within a die and across a wafer or between wafers.
URI: http://hdl.handle.net/10356/3766
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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