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https://hdl.handle.net/10356/3766
Title: | Improvement on within wafer and wafer-to-wafer uniformity by chemical mechanical polishing (CMP) | Authors: | Wu, Hong Ying. | Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors | Issue Date: | 2002 | Abstract: | CMP plays a very important role to realize multi-level metallization which is dependent on the ability to effectively planarize the dielectric layers, which insulate the multi-level interconnects. Despite this advantage, the process still suffer from large global non-uniformity within a die and across a wafer or between wafers. | URI: | http://hdl.handle.net/10356/3766 | Schools: | School of Electrical and Electronic Engineering | Rights: | Nanyang Technological University | Fulltext Permission: | restricted | Fulltext Availability: | With Fulltext |
Appears in Collections: | EEE Theses |
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EEE-THESES_1596.pdf Restricted Access | 13.01 MB | Adobe PDF | View/Open |
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