Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3833
Title: Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs)
Authors: Yang, Hong
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2005
Source: Yang, H. (2005). Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs). Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: High gain metamorphic InP/InGaAs/InP DHBTs (double heterojunction bipolar transistors) on GaAs substrate fabricated using complete NTU in-house process have been demonstrated in this investigation. DC and RF characterization of various MHBTs (metamorphic HBTs), including noise and power measurements, elevated temperature and current stress measurements, evaluation of thermal resistance, and performance comparison of devices grown by different growth techniques have been accomplished. Other important tasks completed include new device design and mask layout, and development of two-micron or less emitter width device process technology.
URI: https://hdl.handle.net/10356/3833
DOI: 10.32657/10356/3833
Rights: Nanyang Technological University
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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