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https://hdl.handle.net/10356/3893
Title: | A study on ion implant uniformity | Authors: | Chen, Xiao Song. | Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors | Issue Date: | 2003 | Abstract: | As a result of the recombination of electrons with the positive dopant ion species, neutral dopant atoms (no charge) are created during the process of ion being injected into wafer. Since the Faraday System (an instrument to measure Beam current) can only count charged atoms, the neutral dopant atoms are not counted resulting in an inaccurate dose measurement. | URI: | http://hdl.handle.net/10356/3893 | Schools: | School of Electrical and Electronic Engineering | Rights: | Nanyang Technological University | Fulltext Permission: | restricted | Fulltext Availability: | With Fulltext |
Appears in Collections: | EEE Theses |
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File | Description | Size | Format | |
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EEE-THESES_171.pdf Restricted Access | 2.75 MB | Adobe PDF | View/Open |
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