Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3893
Title: A study on ion implant uniformity
Authors: Chen, Xiao Song.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2003
Abstract: As a result of the recombination of electrons with the positive dopant ion species, neutral dopant atoms (no charge) are created during the process of ion being injected into wafer. Since the Faraday System (an instrument to measure Beam current) can only count charged atoms, the neutral dopant atoms are not counted resulting in an inaccurate dose measurement.
URI: http://hdl.handle.net/10356/3893
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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