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https://hdl.handle.net/10356/3902| Title: | Deep level effects on the characteristics of high electron mobility transistors grown by solid source MBE | Authors: | Yip, Kim Hong. | Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors | Issue Date: | 2001 | Abstract: | This thesis presents the effect of deep levels on the performance of InxGa1-xP/In0.20Ga0.80As/GaAs and AlyGa1-yAs/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistor (pHEMT) grown by solid source molecular beam epitaxy (SSMBE). | URI: | http://hdl.handle.net/10356/3902 | Schools: | School of Electrical and Electronic Engineering | Rights: | Nanyang Technological University | Fulltext Permission: | restricted | Fulltext Availability: | With Fulltext |
| Appears in Collections: | EEE Theses |
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| File | Description | Size | Format | |
|---|---|---|---|---|
| EEE-THESES_1718.pdf Restricted Access | 1.83 MB | Adobe PDF | View/Open |
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