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Title: MOSFET noise modeling for wireless applications
Authors: Chen, Xuezhong.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Wireless communication systems
Issue Date: 2003
Abstract: This thesis presents a high-frequency noise model of MOS (Metal Oxide Semiconductor) devices. The high frequency (HF) noise model is based on the equivalent circuit of the MOS device, but it takes into account both the gate resistance distribution and hot carrier effect.
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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