Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/39044
Title: Synthesis, characterisation and device application of silicon nanocrystals
Authors: Ng, Chi Yung
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Issue Date: 2007
Source: Ng, C. Y. (2007). Synthesis, characterisation and device application of silicon nanocrystals. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: It is the intent of this work to investigate the physics and device applications of silicon nanocrystals embedded in dielectric film. Silicon nanocrystals embedded in Si02 film have been synthesized using ion-implantation. Metal-oxide-semiconductor field-effect-transistors (MOSFET) embedded with silicon nanocrystal as charge storage node has also been fabricated. The electrical characteristics of the structure are obtained using the conventional current-voltage (I-V) and capacitance-voltage (C-V) techniques. To identify the size of the silicon nanocrystal, X-ray Diffraction (XRD) and cross-section Transmission Electron Microscopy (TEM) measurements have been conducted.
Description: 259 p.
URI: https://hdl.handle.net/10356/39044
DOI: 10.32657/10356/39044
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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