Please use this identifier to cite or link to this item:
|Title:||Synthesis, characterisation and device application of silicon nanocrystals||Authors:||Ng, Chi Yung||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics||Issue Date:||2007||Source:||Ng, C. Y. (2007). Synthesis, characterisation and device application of silicon nanocrystals. Doctoral thesis, Nanyang Technological University, Singapore.||Abstract:||It is the intent of this work to investigate the physics and device applications of silicon nanocrystals embedded in dielectric film. Silicon nanocrystals embedded in Si02 film have been synthesized using ion-implantation. Metal-oxide-semiconductor field-effect-transistors (MOSFET) embedded with silicon nanocrystal as charge storage node has also been fabricated. The electrical characteristics of the structure are obtained using the conventional current-voltage (I-V) and capacitance-voltage (C-V) techniques. To identify the size of the silicon nanocrystal, X-ray Diffraction (XRD) and cross-section Transmission Electron Microscopy (TEM) measurements have been conducted.||Description:||259 p.||URI:||https://hdl.handle.net/10356/39044||DOI:||10.32657/10356/39044||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.