dc.contributor.authorNg, Chi Yungen_US
dc.date.accessioned2010-05-21T04:38:24Z
dc.date.accessioned2017-07-23T08:32:48Z
dc.date.available2010-05-21T04:38:24Z
dc.date.available2017-07-23T08:32:48Z
dc.date.copyright2007en_US
dc.date.issued2007
dc.identifier.citationNg, C. Y. (2007). Synthesis, characterisation and device application of silicon nanocrystals. Doctoral thesis, Nanyang Technological University, Singapore.
dc.identifier.urihttp://hdl.handle.net/10356/39044
dc.description259 p.en_US
dc.description.abstractIt is the intent of this work to investigate the physics and device applications of silicon nanocrystals embedded in dielectric film. Silicon nanocrystals embedded in Si02 film have been synthesized using ion-implantation. Metal-oxide-semiconductor field-effect-transistors (MOSFET) embedded with silicon nanocrystal as charge storage node has also been fabricated. The electrical characteristics of the structure are obtained using the conventional current-voltage (I-V) and capacitance-voltage (C-V) techniques. To identify the size of the silicon nanocrystal, X-ray Diffraction (XRD) and cross-section Transmission Electron Microscopy (TEM) measurements have been conducted.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Nanoelectronicsen_US
dc.titleSynthesis, characterisation and device application of silicon nanocrystalsen_US
dc.typeThesisen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.supervisorChen Tupei (EEE)en_US
dc.description.degreeDOCTOR OF PHILOSOPHY (EEE)en_US


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