Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/39121
Title: Characterization of deep submicron MOSFET with ultra thin gate oxide
Authors: Sun, Quan.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2006
Abstract: In this dissertation, we mainly focus on characterization of gate oxide breakdown and understanding of the breakdown mechanisms of deep submicron MOSFETs with ultra thin gate oxide.
Description: 85 p.
URI: http://hdl.handle.net/10356/39121
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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