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https://hdl.handle.net/10356/39121
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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Sun, Quan. | en_US |
dc.date.accessioned | 2010-05-21T04:44:31Z | - |
dc.date.available | 2010-05-21T04:44:31Z | - |
dc.date.copyright | 2006 | en_US |
dc.date.issued | 2006 | - |
dc.identifier.uri | http://hdl.handle.net/10356/39121 | - |
dc.description | 85 p. | en_US |
dc.description.abstract | In this dissertation, we mainly focus on characterization of gate oxide breakdown and understanding of the breakdown mechanisms of deep submicron MOSFETs with ultra thin gate oxide. | en_US |
dc.subject | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors | en_US |
dc.title | Characterization of deep submicron MOSFET with ultra thin gate oxide | en_US |
dc.type | Thesis | en_US |
dc.contributor.supervisor | Wang Hong | en_US |
dc.contributor.school | School of Electrical and Electronic Engineering | en_US |
dc.description.degree | Master of Science (Microelectronics) | en_US |
item.fulltext | With Fulltext | - |
item.grantfulltext | restricted | - |
Appears in Collections: | EEE Theses |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
SunQuan2006.pdf Restricted Access | Main report | 8.59 MB | Adobe PDF | View/Open |
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