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https://hdl.handle.net/10356/39121
Title: | Characterization of deep submicron MOSFET with ultra thin gate oxide | Authors: | Sun, Quan. | Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors | Issue Date: | 2006 | Abstract: | In this dissertation, we mainly focus on characterization of gate oxide breakdown and understanding of the breakdown mechanisms of deep submicron MOSFETs with ultra thin gate oxide. | Description: | 85 p. | URI: | http://hdl.handle.net/10356/39121 | Schools: | School of Electrical and Electronic Engineering | Fulltext Permission: | restricted | Fulltext Availability: | With Fulltext |
Appears in Collections: | EEE Theses |
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File | Description | Size | Format | |
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SunQuan2006.pdf Restricted Access | Main report | 8.59 MB | Adobe PDF | View/Open |
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