Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3913
Title: Growth and characterization of metamorphic layer structures for high electron mobility transistors
Authors: Yuan, Kaihua.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2003
Abstract: InP-based high electron mobility transistors (HEMTs) have demonstrated superior high frequency and low noise performance. However, high cost, limited size and brittle nature of InP substrate bring difficulties to low-cost and high-volume production. In order to overcome these drawbacks, it is desirable to develop InP-based metamorphic HEMT devices on GaAs substrates. In this case, the compositionally graded metamorphic buffer layers are widely used to accommodate the large lattice mismatch between the GaAs substrate and the top active layers.
URI: http://hdl.handle.net/10356/3913
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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