A study of dilute nitride compounds grown by molecular beam epitaxy for electronic application

Abstract

Dilute nitride InGaAsN has shown potential application in heteroj unction bipolar transistors (HBTs) on GaAs substrates with low turn-on voltage. The application is based on two features of InGaAsN: firstly, InGaAsN can be lattice-matched to GaAs; secondly, the incorporation of small amounts of N into (In)GaAs reduces the band gap drastically. Hence, the growth and characterization of (In)GaAsN, especially p-type InGaAsN were investigated in this thesis, due to its potential usage in n-p-n HBT devices as the base layer.