Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/39133
Title: A study of dilute nitride compounds grown by molecular beam epitaxy for electronic application
Authors: Xie, Shiyong
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2006
Source: Xie, S. (2006). A study of dilute nitride compounds grown by molecular beam epitaxy for electronic application. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: Dilute nitride InGaAsN has shown potential application in heteroj unction bipolar transistors (HBTs) on GaAs substrates with low turn-on voltage. The application is based on two features of InGaAsN: firstly, InGaAsN can be lattice-matched to GaAs; secondly, the incorporation of small amounts of N into (In)GaAs reduces the band gap drastically. Hence, the growth and characterization of (In)GaAsN, especially p-type InGaAsN were investigated in this thesis, due to its potential usage in n-p-n HBT devices as the base layer.
Description: 120 p.
URI: https://hdl.handle.net/10356/39133
DOI: 10.32657/10356/39133
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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