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|Title:||Fabrication and characterization of silicon-germanium schottky diode||Authors:||Chakravarthi Nanda Kumar||Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2007||Abstract:||Schottky diodes have been widely used in power detection and microwave circuits due to their high switching speeds and low voltage drop. They are often fabricated by depositing metals on n-type or p-type semiconductor materials . Silicon and Silicon Germanium Schottky diodes were fabricated and characterized in this project. Chromium, Gold, Copper, Titanium, Nickel, Nickel-Platinum were used as Schottky metals in the fabrication of n-type Silicon and Silicon Germanium Schottky diodes. Silicon Germanium films were grown epitaxially on the Silicon substrate. The Schottky characteristics, which include barrier height, series resistance and ideality factors, were studied and compared for each of these metals. Behavior of the Schottky characteristics at different alloying temperatures was also studied. A strong dependence of these characteristics on the alloying temperatures, procedures were observed.||Description:||91 p.||URI:||http://hdl.handle.net/10356/39149||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
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