Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3916
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dc.contributor.authorYuan, Xiaohong.en_US
dc.date.accessioned2008-09-17T09:40:19Z-
dc.date.available2008-09-17T09:40:19Z-
dc.date.copyright2002en_US
dc.date.issued2002-
dc.identifier.urihttp://hdl.handle.net/10356/3916-
dc.description.abstractIn this thesis, the integration of CMOS devices with microbolometer on the same silicon chip was studied. Silicon based materials Poly-Si and Poly-SiGe layers were deposited as the sensor films as well as the CMOS gate electrode. Microbolometer test structures and CMOS devices were fabricated using separately process flows.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Electronic circuits-
dc.titleDesign and fabrication of surface micromachined microbolometer for IR image sensoren_US
dc.typeThesisen_US
dc.contributor.supervisorTse, Man Siuen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeMaster of Science (Microelectronics)en_US
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