dc.contributor.authorYu, Suzhuen_US
dc.date.accessioned2008-09-17T09:40:37Z
dc.date.accessioned2017-07-23T08:31:29Z
dc.date.available2008-09-17T09:40:37Z
dc.date.available2017-07-23T08:31:29Z
dc.date.copyright2005en_US
dc.date.issued2005
dc.identifier.citationYu, S. Z. (2005). Fabrication and characterization of mesoporous dielectric materials for ULSI interconnect applications. Doctoral thesis, Nanyang Technological University, Singapore.
dc.identifier.urihttp://hdl.handle.net/10356/3931
dc.description.abstractWith the miniaturization of semiconductor devices, new dielectric materials with dielectric constant (k) lower than silicon dioxide (k = 4.0) are required to reduce propagation delay, cross talk noise and power dissipation of the interconnect system in ultra-large-scale integrated circuits (ULSI). This thesis presents the results of fabrication and characterization of mesoporous organosilicate films used as interconnect dielectrics. Two basic methods to establish porous network in the films, namely the sol-gel and sacrificial template approaches, have been used in this work.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
dc.titleFabrication and characterization of mesoporous dielectric materials for ULSI interconnect applicationsen_US
dc.typeThesisen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.supervisorHu Xiao
dc.contributor.supervisorWong Kin Shun, Terenceen_US
dc.description.degreeDOCTOR OF PHILOSOPHY (EEE)en_US


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