dc.contributor.authorYu, Weiboen_US
dc.date.accessioned2008-09-17T09:40:40Z
dc.date.accessioned2017-07-23T08:31:29Z
dc.date.available2008-09-17T09:40:40Z
dc.date.available2017-07-23T08:31:29Z
dc.date.copyright2005en_US
dc.date.issued2005
dc.identifier.citationYu, W. B. (2005). Fabrication and characterization of silicon- on- insulator using low temperature wafer bonding. Doctoral thesis, Nanyang Technological University, Singapore.
dc.identifier.urihttp://hdl.handle.net/10356/3934
dc.description.abstractIn present study, two low temperature wafer bonding methods, namely the medium vacuum wafer bonding (MVWB) and plasma activated wafer bonding (PAWB), are studied.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Electronic packaging
dc.titleFabrication and characterization of silicon-on-insulator using low temperature wafer bondingen_US
dc.typeThesisen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.supervisorWei Jun
dc.contributor.supervisorTan Cher Mingen_US
dc.description.degreeDOCTOR OF PHILOSOPHY (EEE)en_US


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