Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3966
Title: Design of insulated gate bipolar transistor using novel structure
Authors: Zhang, Guowei
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Power electronics
Issue Date: 2002
Abstract: In this work, Lateral Insulated Gate Bipolar Transistor (LIGBT) based on a novel structure of partial Silicon On Insulator (partial SOI) has been designed. The position of the silicon window has been determined by comparing the simulation results of full SOI and partial SOI, which has the silicon window etched underneath anode or cathode.
URI: http://hdl.handle.net/10356/3966
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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