Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3966
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dc.contributor.authorZhang, Guoweien_US
dc.date.accessioned2008-09-17T09:41:22Z
dc.date.available2008-09-17T09:41:22Z
dc.date.copyright2002en_US
dc.date.issued2002
dc.identifier.urihttp://hdl.handle.net/10356/3966
dc.description.abstractIn this work, Lateral Insulated Gate Bipolar Transistor (LIGBT) based on a novel structure of partial Silicon On Insulator (partial SOI) has been designed. The position of the silicon window has been determined by comparing the simulation results of full SOI and partial SOI, which has the silicon window etched underneath anode or cathode.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Power electronics
dc.titleDesign of insulated gate bipolar transistor using novel structureen_US
dc.typeThesisen_US
dc.contributor.supervisorTan, Cher Mingen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeMaster of Science (Microelectronics)en_US
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