Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3967
Title: Characterization of Si-based materials for surface micromachined microbolometer applications
Authors: Zhang, Guowei
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Issue Date: 2003
Abstract: In this thesis, the integration of CMOS devices with Si-based microbolometer sensor on the same silicon chip was studied. Silicon based material, Poly-Si and Poly-SiGe layers were deposited as the Infra-Red (IR) sensing film as well as the CMOS gate electrode. Microbolometer test structures and CMOS devices were fabricated using separately process flows. The CMOS devices were fabricated using the 2um N-well CMOS process modified by Shallow Trench Isolation (STI) for device isolation.
URI: http://hdl.handle.net/10356/3967
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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