dc.contributor.authorDong, Nie
dc.date.accessioned2010-06-08T03:08:24Z
dc.date.accessioned2017-07-23T08:33:01Z
dc.date.available2010-06-08T03:08:24Z
dc.date.available2017-07-23T08:33:01Z
dc.date.copyright2008en_US
dc.date.issued2008
dc.identifier.citationDong, N. (2008). Implementation of multiple band gaps of quantum wells/dots based on inductively-coupled argon plasma technique. Doctoral thesis, Nanyang Technological University, Singapore.
dc.identifier.urihttp://hdl.handle.net/10356/39929
dc.description.abstractRecently, defect-enhanced interdiffusion, known as intermixing, has been extensively investigated on a wide range of III-V semiconductor quantum well (QW) and quantum dot (QD) structures as a postgrowth process to implement multiple band-gap engergies across a single substrate for monolithic integration of optoelectronic devices. In addition, defect-enhanced interdiffusion provides a unique opportunity to study the interdifussion. In this thesis, defect generation using inductively coupled argon (Ar) plasma (Ar-ICP) exposure, defect-enhanced intermixing and multiple band-gap implementations have been investigated for both InP- and GaAs-based QW and QD structures. In this techinque, the mobile point defects are generated at the near surface region of a structure dut to exposure to ICP Ar plasma and enhance intermixing in the subsequent rapid thermal annealing (RTA) process, whereas band-gap halftones can be achieved in several approaches.en_US
dc.format.extent148 p.en_US
dc.language.isoenen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen_US
dc.titleImplementation of multiple band gaps of quantum wells/dots based on inductively-coupled argon plasma techniqueen_US
dc.typeThesis
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.supervisorWang Yixin
dc.contributor.supervisorMei Tingen_US
dc.description.degreeDOCTOR OF PHILOSOPHY (EEE)en_US


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