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|Title:||Implementation of multiple band gaps of quantum wells/dots based on inductively-coupled argon plasma technique||Authors:||Dong, Nie||Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2008||Source:||Dong, N. (2008). Implementation of multiple band gaps of quantum wells/dots based on inductively-coupled argon plasma technique. Doctoral thesis, Nanyang Technological University, Singapore.||Abstract:||Recently, defect-enhanced interdiffusion, known as intermixing, has been extensively investigated on a wide range of III-V semiconductor quantum well (QW) and quantum dot (QD) structures as a postgrowth process to implement multiple band-gap engergies across a single substrate for monolithic integration of optoelectronic devices. In addition, defect-enhanced interdiffusion provides a unique opportunity to study the interdifussion. In this thesis, defect generation using inductively coupled argon (Ar) plasma (Ar-ICP) exposure, defect-enhanced intermixing and multiple band-gap implementations have been investigated for both InP- and GaAs-based QW and QD structures. In this techinque, the mobile point defects are generated at the near surface region of a structure dut to exposure to ICP Ar plasma and enhance intermixing in the subsequent rapid thermal annealing (RTA) process, whereas band-gap halftones can be achieved in several approaches.||URI:||http://hdl.handle.net/10356/39929||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
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