Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/3996
Title: Growth and characterization of carbon doped GaAs- and InP- based heterojunction bipolar transistors
Authors: Zhang, Rong
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2005
Source: Zhang, R. (2005). Growth and characterization of carbon doped GaAs- and InP- based heterojunction bipolar transistors. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: The results described in this work demonstrate the comprehensive characterization of C-doped GaAs and In0.53Ga0.47As materials and C-doped GaAs-based and InP-based HBT devices grown by SSMBE system using CBr4 as p-type dopant precursor. The characteristics of C-doped GaAs materials, such as the hole concentration, mobility, lattice mismatch, surface morphology, and optical properties, have been comprehensively investigated using various techniques, which help to gain me insight and understanding of the material properties.
URI: https://hdl.handle.net/10356/3996
DOI: 10.32657/10356/3996
Rights: Nanyang Technological University
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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