Growth and characterization of carbon doped GaAs- and InP- based heterojunction bipolar transistors
Date of Issue2005
School of Electrical and Electronic Engineering
The results described in this work demonstrate the comprehensive characterization of C-doped GaAs and In0.53Ga0.47As materials and C-doped GaAs-based and InP-based HBT devices grown by SSMBE system using CBr4 as p-type dopant precursor. The characteristics of C-doped GaAs materials, such as the hole concentration, mobility, lattice mismatch, surface morphology, and optical properties, have been comprehensively investigated using various techniques, which help to gain me insight and understanding of the material properties.
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Nanyang Technological University