dc.contributor.authorZhang, Rongen_US
dc.date.accessioned2008-09-17T09:42:06Z
dc.date.accessioned2017-07-23T08:31:32Z
dc.date.available2008-09-17T09:42:06Z
dc.date.available2017-07-23T08:31:32Z
dc.date.copyright2005en_US
dc.date.issued2005
dc.identifier.citationZhang, R. (2005). Growth and characterization of carbon doped GaAs- and InP- based heterojunction bipolar transistors. Doctoral thesis, Nanyang Technological University, Singapore.
dc.identifier.urihttp://hdl.handle.net/10356/3996
dc.description.abstractThe results described in this work demonstrate the comprehensive characterization of C-doped GaAs and In0.53Ga0.47As materials and C-doped GaAs-based and InP-based HBT devices grown by SSMBE system using CBr4 as p-type dopant precursor. The characteristics of C-doped GaAs materials, such as the hole concentration, mobility, lattice mismatch, surface morphology, and optical properties, have been comprehensively investigated using various techniques, which help to gain me insight and understanding of the material properties.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Semiconductors
dc.titleGrowth and characterization of carbon doped GaAs- and InP- based heterojunction bipolar transistorsen_US
dc.typeThesisen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.supervisorYoon Soon Fatten_US
dc.description.degreeDOCTOR OF PHILOSOPHY (EEE)en_US


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