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|Title:||Characterization of InGaAlAs/InAlAs/InP heterostructures grown by molecular beam epitaxy||Authors:||Zhang, Weimin||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials||Issue Date:||2007||Source:||Zhang, W. (2007).Characterization of InGaAlAs/InAlAs/InP heterostructures grown by molecular beam epitaxy. Master’s thesis, Nanyang Technological University, Singapore.||Abstract:||In this thesis, intersubband absorption of Ino.53Gao.3Alo.17As/Ino.52Alo.48As multiple quantum well (MQW) structures using Fourier transform infrared (FTIR) spectrometry and its verification with photoluminescence (PL) and theoretical calculation are studied. Conduction band offset of the MQW derived from varying temperature I-V measurements, and characteristics of Ino.53Gao.12Alo.35As/Ino.52Alo.4sAs heterojunctions are also investigated||URI:||http://hdl.handle.net/10356/4001||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
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