Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4001
Title: Characterization of InGaAlAs/InAlAs/InP heterostructures grown by molecular beam epitaxy
Authors: Zhang, Weimin
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Issue Date: 2007
Source: Zhang, W. (2007).Characterization of InGaAlAs/InAlAs/InP heterostructures grown by molecular beam epitaxy. Master’s thesis, Nanyang Technological University, Singapore.
Abstract: In this thesis, intersubband absorption of Ino.53Gao.3Alo.17As/Ino.52Alo.48As multiple quantum well (MQW) structures using Fourier transform infrared (FTIR) spectrometry and its verification with photoluminescence (PL) and theoretical calculation are studied. Conduction band offset of the MQW derived from varying temperature I-V measurements, and characteristics of Ino.53Gao.12Alo.35As/Ino.52Alo.4sAs heterojunctions are also investigated
URI: http://hdl.handle.net/10356/4001
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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