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Title: Development of optical transceiver
Authors: Sim, Sebastian Shih Wei.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2010
Abstract: In this Final Year Report, characterization and simulation of the major components in an optical transceiver will be the main focus. The characterization of the photodiode and the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structures will be performed using the apparatus in the Nanophotonic Laboratory. The characteristics of the individual structure under various doping and lighting conditions will be evaluated based on the results obtained. Feasibility of the whole photodiode integrated circuit (PDIC) in the wafer will be tested out and further evaluated. Design and simulation of various photodiode structures will also be performed using the Taurus Tsuprem4 and Taurus Medici. Generally, two basic structures were designed and simulated for evaluations: PN and PIN photodiodes. Process parameters such as the doping profiles and wavelength conditions were varied during the simulation process for further observations and evaluations. For PIN photodiodes, the epitaxial layer was introduced to the structures to act as an intrinsic layer. Simulation tests will be conducted to observe and evaluate the changes made by the epitaxial layer. The setup of the whole characterization procedure and simulation process, as well as the obtaining of the results will be explained in detail for better understanding. Recommendations and improvements will be made for future work.
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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