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|Title:||Transistor DC parameter extraction for high-power and high-frequency applications||Authors:||Yap, Jok Ping.||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Power electronics||Issue Date:||2010||Abstract:||The goal of this project is to implement an automated DC parameters program, which will extract the measurement data obtained from a probe station which performs measurement on transistor. Follow by data analysis, the purpose of analysis is to extract DC parameters to characterize a process and provide a qualitative basis for high power and high frequency device-design issues. Parameters extracted in this project include: maximum drain current (Idmax), knee voltage (Vknee), leakage of drain and gate current (Idleak & Igleak), drain source resistance (Rds), maximum transconductance (gmmax), threshold voltage (Vth), source resistance (Rs), intrinsic transconductance (gm0), breakdown voltage (BVgd) and thermal conductivity percentage. Finally, using the extracted Gallium Nitride (GaN) based high electron mobility (HEMT) DC parameters to compare the device’s performance with the function of gate length (Lg) and gate drain length (Lgd).||URI:||http://hdl.handle.net/10356/40246||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Student Reports (FYP/IA/PA/PI)|
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