Photoluminescence of semiconductors and semiconductors nanostructures

Abstract

Photoluminescence (PL) has gain popularity as a very important characterization technique for the fact that it is non-destructive and has the ability to investigate the optical and electronic properties of a variety of samples. One of the important applications of PL is the identification of various energy states in semiconductors. In this project, the author learnt and set up the PL system to study the emission characteristics of semiconductor and semiconductor nanostructures. Through PL spectra obtained, diverse parameters was extracted such as the energy gap, composition of alloys, quality of materials, impurities levels and even recombination mechanism. Main emphasis of the project was the conducting of PL under cryogenic environment where in-depth analysis was carried out further with additional information which could not be obtained at room temperature. In addition, different structural characteristic was studied based on the experimental results in the project.