Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/40341
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dc.contributor.authorWong, Ying Hui.-
dc.date.accessioned2010-06-15T01:03:17Z-
dc.date.available2010-06-15T01:03:17Z-
dc.date.copyright2010en_US
dc.date.issued2010-
dc.identifier.urihttp://hdl.handle.net/10356/40341-
dc.description.abstractPhotoluminescence (PL) has gain popularity as a very important characterization technique for the fact that it is non-destructive and has the ability to investigate the optical and electronic properties of a variety of samples. One of the important applications of PL is the identification of various energy states in semiconductors. In this project, the author learnt and set up the PL system to study the emission characteristics of semiconductor and semiconductor nanostructures. Through PL spectra obtained, diverse parameters was extracted such as the energy gap, composition of alloys, quality of materials, impurities levels and even recombination mechanism. Main emphasis of the project was the conducting of PL under cryogenic environment where in-depth analysis was carried out further with additional information which could not be obtained at room temperature. In addition, different structural characteristic was studied based on the experimental results in the project.en_US
dc.format.extent56 p.en_US
dc.language.isoenen_US
dc.rightsNanyang Technological University-
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonicsen_US
dc.titlePhotoluminescence of semiconductors and semiconductors nanostructuresen_US
dc.typeFinal Year Project (FYP)en_US
dc.contributor.supervisorTang Xiaohongen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeBachelor of Engineeringen_US
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Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)
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