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Title: Characterization study of multifunctional thin films and electronic devices
Authors: Zhang, Chen
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Issue Date: 2010
Abstract: In this Final Year Project, the ferroelectric material BaTiO3 which can be used in the application of Ferroelectric Random Access Memory (FeRAM) has been studied on its electric properties. The BaTiO3 layer is grown on SrTiO3 substrates using laser Molecular Beam Epitaxy (MBE). In the structure, the BaTiO3 is sandwiched by two layers of SrRuO3 which act as top and bottom electrodes. Photomasks are designed by using the CAD tool, L-Edit. Then through the photolithography, etching and deposition process, the prototype device could be fabricated. Therefore, electrical characterization like polarization, Hall Effect and resistivity measurements could be conducted.
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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