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|Title:||Design and analysis of transimit / receive switch in CMOS||Authors:||Lin, Kui.||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits||Issue Date:||2010||Abstract:||Wireless communication technologies rapidly growth in the last decade. Advance silicon processing technologies had achieved low cost, small size transmit/ receive switch device. The market demand of wireless communication system rapidly increases. To study of this system become more and more popular. The focus of this project is to design and analysis of a transmit/receive switch with an ESD protection included in 0.18-μm CMOS. Review and study all reported T/R switch designs Techniques proposed in previous reports for improving CMOS T/R switch is summarized and analyzed. Most focus on study and understand the features of single-input multiple-output (SIMO) systems. Utilizing CSM 0.18-μm technology, to design and simulate the full-range SP8T CMOS T/R switch architecture. And study the performances of insertion loss, isolation, and return loss of this design.||URI:||http://hdl.handle.net/10356/40639||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Student Reports (FYP/IA/PA/PI)|
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