Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4072
Title: Design, simulation and fabrication of silicon carbide metal semiconductor field effect transistors
Authors: Zhu, Chunlin
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2007
Source: Zhu, C. (2007). Design, simulation and fabrication of silicon carbide metal semiconductor field effect transistors. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: SiC MESFETs have been designed, simulated, fabricated and characterized for high power, high frequency and high temperature applications due to the excellent electronic and physical properties of SiC, such as wide band gap, high breakdown electric field strength, large electron saturation velocity and high thermal conductivity.
URI: https://hdl.handle.net/10356/4072
DOI: 10.32657/10356/4072
Schools: School of Electrical and Electronic Engineering 
Rights: Nanyang Technological University
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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