MOCVD growth of III-V compounds for long wavelength optoelectronic devices
Date of Issue2005
School of Electrical and Electronic Engineering
Metal-Organic Chemical Vapour Deposition (MOCVD) growth of InP based III-V semiconductor materials for long-wavelength semiconductor lasers have been studied in detail. With tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) as group V precursors and N2 as carrier gas, high quality InP based III-V semiconductor alloys and quantum well (QW) structures have been grown by using MOCVD technology.
DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Nanyang Technological University