Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4075
Title: MOCVD growth of III-V compounds for long wavelength optoelectronic devices
Authors: Zhu, Jingyi
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2005
Source: Zhu, J. (2005). MOCVD growth of III-V compounds for long wavelength optoelectronic devices. Master’s thesis, Nanyang Technological University, Singapore.
Abstract: Metal-Organic Chemical Vapour Deposition (MOCVD) growth of InP based III-V semiconductor materials for long-wavelength semiconductor lasers have been studied in detail. With tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) as group V precursors and N2 as carrier gas, high quality InP based III-V semiconductor alloys and quantum well (QW) structures have been grown by using MOCVD technology.
URI: https://hdl.handle.net/10356/4075
DOI: 10.32657/10356/4075
Rights: Nanyang Technological University
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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