Please use this identifier to cite or link to this item:
|Title:||Verification of selected electron beam induced current (EBIC) techniques||Authors:||Ang, Alex Yong Guan||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Semiconductors||Issue Date:||2003||Abstract:||The diffusion lengths of materials within semiconductor devices have a very strong impact on device performance. Therefore, there is a need to establish a method that is capable of determining the diffusion length accurately within a semiconductor device. By using the scanning electron microscope (SEM) operating in the electron beam-induced current (EBIC) mode.||URI:||http://hdl.handle.net/10356/4104||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.