Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4104
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dc.contributor.authorAng, Alex Yong Guanen_US
dc.date.accessioned2008-09-17T09:44:32Z
dc.date.available2008-09-17T09:44:32Z
dc.date.copyright2003en_US
dc.date.issued2003
dc.identifier.urihttp://hdl.handle.net/10356/4104
dc.description.abstractThe diffusion lengths of materials within semiconductor devices have a very strong impact on device performance. Therefore, there is a need to establish a method that is capable of determining the diffusion length accurately within a semiconductor device. By using the scanning electron microscope (SEM) operating in the electron beam-induced current (EBIC) mode.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Semiconductors
dc.titleVerification of selected electron beam induced current (EBIC) techniquesen_US
dc.typeThesisen_US
dc.contributor.supervisorOng, Vincent Keng Sianen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeMaster of Science (Integrated Circuit Design)en_US
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