Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4112
Title: Carbon doped silicon oxides for low k dielectric applications in multilevel interconnects
Authors: Liu, Bo.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
Issue Date: 2008
Source: Liu, B. (2008). Carbon doped silicon oxides for low k dielectric applications in multilevel interconnects. Master’s thesis, Nanyang Technological University, Singapore.
Abstract: This project aims at deposition and characterization of carbon doped silicon oxides (SiOCH) low k dieletrics for multilevel interconnect applications. The optical, electrical, mechanical, structural and thermal properties of SiOCH films have been studied.
URI: http://hdl.handle.net/10356/4112
Rights: Nanyang Technological University
metadata.item.grantfulltext: restricted
metadata.item.fulltext: With Fulltext
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